ANODIC OXIDE GROWN ON SILICON-CARBIDE

被引：1

作者：

HUEZ, M ^{[1
]}

RESTELLI, G ^{[1
]}

MANARA, A ^{[1
]}

机构：

[1] JOINT RES CTR,ELECTR & PHYS DIV,ISPARA,ITALY

来源：

关键词：

D O I：

10.1016/0040-6090(74)90231-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：S33 / S36

页数：4

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