BAND-EDGE REFRACTIVE OPTICAL NONLINEARITIES IN MOLECULAR BEAM-GROWN ZNSE EPILAYERS

被引:12
|
作者
BOLGER, JA
GALBRAITH, I
KAR, AK
SIMPSON, J
WANG, SY
PRIOR, KA
CAVENETT, BC
WHERRETT, BS
机构
[1] UNIV SYDNEY,CTR OPT FIBRE TECHNOL,SYDNEY,NSW 2006,AUSTRALIA
[2] DEF RES AGCY,WORCESTER WR14 3PS,ENGLAND
关键词
D O I
10.1063/1.109935
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report novel measurements of the room temperature refractive optical nonlinearities in a molecular beam epitaxy-grown ZnSe epilayer at frequencies near to the band edge. Time-resolved changes in the transmission spectrum due to a two-photon generated plasma of free carriers are monitored with a broad-band white-light continuum probe. The refractive index changes, measured for photon energies between 0.8 and 0.05 eV below the free-exciton line at 2.68 eV, with photoexcited carrier densities of (2-5) X 10(18) cm-3, are found to be in good agreement with a many-body plasma calculation.
引用
收藏
页码:709 / 711
页数:3
相关论文
共 50 条
  • [21] The origins of near band-edge transitions in hexagonal boron nitride epilayers
    Du, X. Z.
    Li, J.
    Lin, J. Y.
    Jiang, H. X.
    APPLIED PHYSICS LETTERS, 2016, 108 (05)
  • [22] Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy
    Kim, GH
    Choi, JB
    Leem, JY
    Lee, JI
    Noh, SK
    Kim, JS
    Kim, JS
    Kang, SK
    Ban, SI
    JOURNAL OF CRYSTAL GROWTH, 2002, 234 (01) : 110 - 114
  • [23] ROOM-TEMPERATURE EXCITONIC OPTICAL NONLINEARITIES OF MOLECULAR-BEAM EPITAXIALLY GROWN ZNSE THIN-FILMS
    PEYGHAMBARIAN, N
    PARK, SH
    KOCH, SW
    JEFFERY, A
    POTTS, JE
    CHENG, H
    APPLIED PHYSICS LETTERS, 1988, 52 (03) : 182 - 184
  • [24] Physical mechanisms of photoluminescence of chlorine-doped ZnSe epilayers grown by molecular beam epitaxy
    Wang, SZ
    Yoon, SF
    He, L
    Shen, XC
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2314 - 2320
  • [25] Physical mechanisms of photoluminescence of chlorine-doped ZnSe epilayers grown by molecular beam epitaxy
    Wang, S.Z.
    Yoon, S.F.
    He, L.
    Shen, X.C.
    1600, American Institute of Physics Inc. (90):
  • [26] Lattice vibration of ZnSe1-xTex epilayers grown by molecular-beam epitaxy
    Yang, CS
    Chou, WC
    Chen, DM
    Ro, CS
    Shen, JL
    Yang, TR
    PHYSICAL REVIEW B, 1999, 59 (12): : 8128 - 8131
  • [27] THE INFLUENCE OF NITROGEN ON THE P-CONDUCTIVITY IN ZNSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    HOFFMANN, A
    LUMMER, B
    ECKEY, L
    KUTZER, V
    FRICKE, C
    HEITZ, R
    BROSER, I
    KURTZ, E
    JOBST, B
    HOMMEL, D
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 1073 - 1074
  • [28] Electric field effects in photoreflectance spectra of ZnSe epilayers grown on GaAs by molecular beam epitaxy
    Constantino, ME
    Salazar-Hernández, B
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (01) : 93 - 97
  • [29] Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy
    Chen, GD
    Smith, M
    Lin, JY
    Jiang, HX
    Salvador, A
    Sverdlov, BN
    Botchkarv, A
    Morkoc, H
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) : 2675 - 2683
  • [30] Band-edge structure of diamond films grown on silicon
    Kita, T
    Mochida, A
    Nishino, T
    Hatta, A
    Ito, T
    Hiraki, A
    DIAMOND FILMS AND TECHNOLOGY, 1998, 8 (05): : 355 - 360