BAND-EDGE REFRACTIVE OPTICAL NONLINEARITIES IN MOLECULAR BEAM-GROWN ZNSE EPILAYERS

被引:12
|
作者
BOLGER, JA
GALBRAITH, I
KAR, AK
SIMPSON, J
WANG, SY
PRIOR, KA
CAVENETT, BC
WHERRETT, BS
机构
[1] UNIV SYDNEY,CTR OPT FIBRE TECHNOL,SYDNEY,NSW 2006,AUSTRALIA
[2] DEF RES AGCY,WORCESTER WR14 3PS,ENGLAND
关键词
D O I
10.1063/1.109935
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report novel measurements of the room temperature refractive optical nonlinearities in a molecular beam epitaxy-grown ZnSe epilayer at frequencies near to the band edge. Time-resolved changes in the transmission spectrum due to a two-photon generated plasma of free carriers are monitored with a broad-band white-light continuum probe. The refractive index changes, measured for photon energies between 0.8 and 0.05 eV below the free-exciton line at 2.68 eV, with photoexcited carrier densities of (2-5) X 10(18) cm-3, are found to be in good agreement with a many-body plasma calculation.
引用
收藏
页码:709 / 711
页数:3
相关论文
共 50 条
  • [1] Near-band-edge optical properties of molecular beam epitaxy grown ZnSe epilayers on GaAs by modulation spectroscopy
    Tu, RC
    Su, YK
    Li, CF
    Huang, YS
    Chou, ST
    Lan, WH
    Tu, SL
    Chang, H
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) : 1664 - 1669
  • [2] Near band-edge and excitonic behavior of GaAsN epilayers grown by Chemical Beam Epitaxy
    Coaquira, JAH
    Bhusal, L
    Zhu, W
    Fotkatzikis, A
    Pinault, MA
    Litvinchuk, AP
    Freundlich, A
    PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS IV-ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2005, 829 : 505 - 510
  • [3] Band-edge photoluminescence of AIN epilayers
    Li, J
    Nam, KB
    Nakarmi, ML
    Lin, JY
    Jiang, HX
    APPLIED PHYSICS LETTERS, 2002, 81 (18) : 3365 - 3367
  • [4] THERMALLY INDUCED OPTICAL BISTABILITY IN ZNSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    KUDLEK, G
    HOLLANDT, J
    PRESSER, N
    GUTOWSKI, J
    DURBIN, SM
    MENKE, DR
    KOBAYASHI, M
    GUNSHOR, RL
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2532 - 2534
  • [5] DYNAMICS OF A BAND-EDGE TRANSITION IN GAN GROWN BY MOLECULAR-BEAM EPITAXY
    SMITH, M
    CHEN, GD
    LIN, JY
    JIANG, HX
    SALVADOR, A
    SVERDLOV, BN
    BOTCHKAREV, A
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1995, 66 (25) : 3474 - 3476
  • [6] Optical properties of the ZnSe1-xTex epilayers grown by molecular beam epitaxy
    Yang, CS
    Hong, DY
    Lin, CY
    Chou, WC
    Ro, CS
    Uen, WY
    Lan, WH
    Tu, SL
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (05) : 2555 - 2559
  • [7] OPTICAL NONLINEARITIES AT THE BAND-EDGE OF CAAS AT ROOM-TEMPERATURE
    HEESEL, H
    ZETTLER, T
    EWERTZ, A
    KURZ, H
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (126): : 325 - 328
  • [8] NEAR BAND-EDGE LUMINESCENCE IN ZNSE GROWN FROM GALLIUM SOLUTION
    FITZPATRICK, BJ
    BHARGAVA, RN
    HERKO, SP
    HARNACK, PM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 341 - 343
  • [9] Band-edge photoluminescence of CuGaSe2 films grown by molecular beam epitaxy
    Yamada, A
    Makita, Y
    Niki, S
    Obara, A
    Fons, P
    Shibata, H
    Kawai, M
    Chichibu, S
    Nakanishi, H
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) : 4318 - 4322
  • [10] Quantum yield of band-edge emission between 77 and 300 K of undoped and nitrogen-doped ZnSe epilayers grown by MOVPE
    Gurskii, A.L.
    Gavrilenko, A.N.
    Lutsenko, E.V.
    Yablonskii, G.P.
    Taudt, W.
    Wachtendorf, B.
    Soellner, J.
    Schmoranzer, J.
    Heuken, M.
    Materials Science Forum, 1995, 182-184 : 243 - 246