SILICON DOPING OF MBE-GROWN GAAS FILMS

被引：76
|
作者：
NEAVE, JH
DOBSON, PJ
HARRIS, JJ
DAWSON, P
JOYCE, BA
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 32卷 / 04期
关键词：
D O I：
10.1007/BF00820260
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：195 / 200
页数：6
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