CONFINEMENT OF EXCESS ARSENIC INCORPORATED IN THIN-LAYERS OF MBE-GROWN LOW-TEMPERATURE GAAS

被引：0
|
作者：
IBBETSON, JP
BOLOGNESI, CR
WEMAN, H
GOSSARD, AC
MISHRA, UK
机构：
[1] UNIV CALIF SANTA BARBARA, DEPT ELECT & COMP ENGN, SANTA BARBARA, CA 93106 USA
[2] UNIV CALIF SANTA BARBARA, QUEST CTR SCI & TECHNOL, SANTA BARBARA, CA 93106 USA
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 120期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：37 / 42
页数：6
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