EFFECT OF REABSORBED RECOMBINATION RADIATION ON THE DIFFUSION LENGTH OF MINORITY-CARRIERS IN WIDE-BAND-GAP SEMICONDUCTORS

被引：11
|
作者：
VONROOS, O
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期
关键词：
D O I：
10.1063/1.332367
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2495 / 2498
页数：4
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