GAAS/ALGAAS QUANTUM-WELLS AND DOUBLE-HETEROSTRUCTURE LASERS GROWN BY CHEMICAL BEAM EPITAXY

被引:11
|
作者
TSANG, WT [1 ]
MILLER, RC [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1016/0022-0248(86)90282-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:55 / 65
页数:11
相关论文
共 50 条
  • [31] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
    CHO, AY
    CASEY, HC
    APPLIED PHYSICS LETTERS, 1974, 25 (05) : 288 - 290
  • [32] INTERFACE STATES AND CURRENT THRESHOLD OF GAAS/ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    HONG, CS
    WANG, WI
    EASTMAN, LF
    WOOD, CEC
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 297 - 302
  • [34] GROWTH OF SHALLOW ALGAAS/GAAS QUANTUM-WELLS BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    JAN, WY
    CUNNINGHAM, JE
    GOOSSEN, KW
    KNOX, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 972 - 974
  • [35] METALLIC QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    HARBISON, JP
    SANDS, T
    RAMESH, R
    TABATABAIE, N
    GILCHRIST, HL
    FLOREZ, LT
    KERAMIDAS, VG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 242 - 245
  • [36] OPTICAL INVESTIGATIONS IN (IN,GA)AS/GAAS QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    LEYMARIE, J
    MONIER, C
    VASSON, A
    VASSON, AM
    LEROUX, M
    COURBOULES, B
    GRANDJEAN, N
    DEPARIS, C
    MASSIES, J
    PHYSICAL REVIEW B, 1995, 51 (19) : 13274 - 13280
  • [37] OPTICAL-PROPERTIES OF GAAS/AIGAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    PEARAH, PJ
    MASSELINK, WT
    HENDERSON, T
    PENG, CK
    MORKOC, H
    SANDERS, GD
    CHANG, YC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 525 - 527
  • [38] INVESTIGATION OF HIGH IN CONTENT INGAAS QUANTUM-WELLS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY
    LORD, SM
    PEZESHKI, B
    JUN, JSH
    ELECTRONICS LETTERS, 1992, 28 (13) : 1193 - 1195
  • [39] CHEMICAL BEAM EPITAXY OF GA0.47IN0.53AS/INP QUANTUM-WELLS AND HETEROSTRUCTURE DEVICES
    TSANG, WT
    JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 261 - 269
  • [40] Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments
    Contreras-Guerrero, R.
    Guillen-Cervantes, A.
    Rivera-Alvarez, Z.
    Pulzara-Mora, A.
    Gallardo-Hernandez, S.
    Kudriatsev, Y.
    Sanchez-Resendiz, V. M.
    Rojas-Ramirez, J. S.
    Cruz-Hernandez, E.
    Mendez-Garcia, V. H.
    Zamora-Peredo, L.
    Lopez-Lopez, M.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1666 - 1670