INFLUENCE OF SB AND BI EPITAXIAL MONOLAYERS ON THE METAL GAAS(110) INTERFACE FORMATION

被引：9
|
作者：
ZAHN, DRT
ESSER, N
MULLER, C
RICHTER, W
STEPHENS, C
WHITTLE, R
MCGOVERN, IT
KULKARNI, S
BRAUN, W
机构：
[1] UNIV DUBLIN TRINITY COLL,DEPT PURE & APPL PHYS,DUBLIN 2,IRELAND
[2] UNIV POONA,DEPT PHYS,POONA 411007,MAHARASHTRA,INDIA
[3] BERLINER SPEICHERRINGGESELL SYNCHROTRONSTRAHLUNG MBH,W-1000 BERLIN 33,GERMANY
来源：
APPLIED SURFACE SCIENCE | 1992年 / 56-8卷
关键词：
D O I：
10.1016/0169-4332(92)90239-T
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The influence of Sb and Bi epitaxial monolayers on the interfacial reactivity and the Schottky barrier formation was investigated for Ag and Mn deposition onto ultra-high vacuum cleaved GaAs(110) substrates. High resolution soft X-ray photoemission spectroscopy was utilized to monitor the core level emission of the substrates as well as the Sb or Bi interlayer emission. While both Sb and Bi monolayers on GaAs have been reported to form thermally stable epitaxial overlayers the deposition of either metals leads to a disruption of the interlayers. The interlayer atoms segregate to the metal surface and the Schottky barrier heights for large metal coverages concur with the values reported for Ag and Mn deposition onto clean GaAs(110).
引用
收藏
页码：228 / 232
页数：5
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