INFLUENCE OF SB AND BI EPITAXIAL MONOLAYERS ON THE METAL GAAS(110) INTERFACE FORMATION

The influence of Sb and Bi epitaxial monolayers on the interfacial reactivity and the Schottky barrier formation was investigated for Ag and Mn deposition onto ultra-high vacuum cleaved GaAs(110) substrates. High resolution soft X-ray photoemission spectroscopy was utilized to monitor the core level emission of the substrates as well as the Sb or Bi interlayer emission. While both Sb and Bi monolayers on GaAs have been reported to form thermally stable epitaxial overlayers the deposition of either metals leads to a disruption of the interlayers. The interlayer atoms segregate to the metal surface and the Schottky barrier heights for large metal coverages concur with the values reported for Ag and Mn deposition onto clean GaAs(110).