PRESSURE AND TEMPERATURE-DEPENDENCE OF THE ELECTRIC-FIELD GRADIENT (EFG) IN CDS

Using the time differential perturbed angular correlation technique (TDPAC), the electric hyperfine interaction of Cd-111 in the II-VI-semiconductor CdS was investigated. The results of the temperature and pressure dependence of the electric field gradient (EFG) are discussed. The binding energy E(b) for In-111 at a Cd lattice site and a Cd vacancy (In-111(Cd)-V(Cd)-pair) could be estimated to 340 meV +/- 80 meV by means of an Arrhenius-Plot. The disappearance of the 79 MHz and 73 MHz frequencies under a pressure of about 30 kbar could be due to their vacancy character or to the beginning of the phase transition to rocksalt structure.