DIFFUSION OF IMPURITIES IN UNDERCOOLED MELT OF PULSE HEATED ION-IMPLANTED SILICON

被引：2
|
作者：
DVURECHENSKII, AV
GROTZSCHEL, R
IGONINA, NM
KOVAL, BA
LEBEDEVA, NI
机构：
[1] ACAD SCI GDR,ZENT INST KERNFORSCH,DDR-8051 DRESDEN,GER DEM REP
[2] ACAD SCI USSR,INST HIGH POWER ELECTR,TOMSK 634055,USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 84卷 / 01期
关键词：
D O I：
10.1002/pssa.2210840121
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：171 / 177
页数：7
相关论文
共 50 条
  • [41] HREM STUDIES OF ION-IMPLANTED SILICON
    VANLANDUYT, J
    DEVEIRMAN, A
    VANHELLEMONT, J
    BENDER, H
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 1 - 10
  • [42] Raman spectroscopy of ion-implanted silicon
    Tuschel, DD
    Lavine, JP
    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 143 - 148
  • [43] PLANAR CHANNELING IN ION-IMPLANTED SILICON
    BLOOD, P
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (02): : K151 - K154
  • [44] Photoluminescence study of ion-implanted silicon
    Terashima, K
    Ikarashi, T
    Watanabe, M
    Kitano, T
    NEC RESEARCH & DEVELOPMENT, 1998, 39 (03): : 289 - 298
  • [45] LASER ANNEALING OF ION-IMPLANTED SILICON
    YOUNG, RT
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 264 - 265
  • [46] Photoluminescence study of ion-implanted silicon
    Terashima, Koichi
    Ikarashi, Taeko
    Watanabe, Masahito
    Kitano, Tomohisa
    NEC Research and Development, 1998, 39 (03): : 289 - 298
  • [47] Integral stress in ion-implanted silicon
    Tamulevicius, S
    Pozela, I
    Jankauskas, J
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (21) : 2991 - 2996
  • [48] THE ION-IMPLANTED ARSENIC TAIL IN SILICON
    BECK, SE
    JACCODINE, RJ
    CLARK, C
    ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 73 - 78
  • [49] ION-IMPLANTED DEVICES IN SILICON ON SAPPHIRE
    PETERSTROM, S
    HOLMEN, G
    PHYSICA SCRIPTA, 1980, 22 (03): : 308 - 313
  • [50] PROPERTIES OF ION-IMPLANTED SILICON DETECTORS
    ZULLIGER, HR
    DRUMMOND, WE
    MIDDLEMAN, LM
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (03) : 306 - +
12345