GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES

被引：48
|
作者：
CHOI, HK
TSAUR, BY
METZE, GM
TURNER, GW
FAN, JCC
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 06期
关键词：
D O I：
10.1109/EDL.1984.25889
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：207 / 208
页数：2
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