GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES

被引：48
|
作者：
CHOI, HK
TSAUR, BY
METZE, GM
TURNER, GW
FAN, JCC
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 06期
关键词：
D O I：
10.1109/EDL.1984.25889
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：207 / 208
页数：2
相关论文
共 50 条
  • [1] GAAS-MESFETS FABRICATED ON INP SUBSTRATES
    ASANO, K
    KASAHARA, K
    ITOH, T
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 289 - 290
  • [2] GAAS-MESFETS AND ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES
    CHOI, HK
    WINDHORN, TH
    TSAUR, BY
    METZE, GM
    TURNER, GW
    FAN, JCC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1988 - 1988
  • [3] MONOLITHIC INTEGRATION OF SI MOSFETS AND GAAS-MESFETS
    CHOI, HK
    TURNER, GW
    TSAUR, BY
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 241 - 243
  • [4] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES
    FISCHER, RJ
    CHAND, N
    KOPP, WF
    PENG, CK
    MORKOC, H
    GLEASON, KR
    SCHEITLIN, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 206 - 213
  • [5] GAAS-MESFETS AND RING OSCILLATORS ON MOCVD GROWN GAAS/SI(100) SUBSTRATES
    NONAKA, T
    AKIYAMA, M
    KAWARADA, Y
    KAMINISHI, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2551 - 2552
  • [6] PERFORMANCE OF GAAS-MESFETS ON INP SUBSTRATES
    REN, F
    HOBSON, WS
    PEARTON, SJ
    OSTER, LJ
    SMITH, PR
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (08) : 389 - 390
  • [7] GAAS-MESFETS AND MONOLITHIC CIRCUITS IN CRYOGENIC ENVIRONMENTS
    CAMIN, DV
    PESSINA, G
    PREVITALI, E
    JOURNAL DE PHYSIQUE IV, 1994, 4 (C6): : 159 - 164
  • [8] COIMPLANTATION OF MG AND SI IN GAAS-MESFETS
    KUZMIK, J
    LALINSKY, T
    SEIDL, P
    SOLID-STATE ELECTRONICS, 1993, 36 (03) : 427 - 430
  • [9] GAAS-MESFETS, RING OSCILLATORS AND DIVIDE-BY-2 INTEGRATED-CIRCUITS FABRICATED ON MBE GROWN GAAS ON SI SUBSTRATES
    REN, F
    CHAND, N
    GARBINSKI, P
    PEARTON, SJ
    WU, CS
    URBANEK, LD
    FULLOWAN, T
    SHAH, N
    FEUER, MD
    ELECTRONICS LETTERS, 1988, 24 (16) : 1037 - 1039
  • [10] ION-IMPLANTATION AND ACTIVATION BEHAVIOR OF SI IN MBE-GROWN GAAS ON SI SUBSTRATES FOR GAAS-MESFETS
    CHAND, N
    REN, F
    PEARTON, SJ
    SHAH, NJ
    CHO, AY
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) : 185 - 187
12345