共 50 条
- [41] ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS PHYSICAL REVIEW, 1950, 80 (06): : 1104 - 1105
- [44] Fabrication of blocked impurity-band structures on gallium-doped silicon by plasma hydrogenation Semiconductors, 1997, 31 : 255 - 260
- [45] CONCENTRATION QUENCHING OF LUMINESCENCE BY DONORS OR ACCEPTORS IN GALLIUM PHOSPHIDE AND IMPURITY-BAND AUGER MODEL PHYSICAL REVIEW, 1968, 173 (03): : 814 - +
- [49] FROM BAND TAILING TO IMPURITY-BAND FORMATION AND DISCUSSION OF LOCALIZATION IN DOPED SEMICONDUCTORS - A MULTIPLE-SCATTERING APPROACH PHYSICAL REVIEW B, 1983, 28 (08): : 4704 - 4715
- [50] CARRIER LOCALIZATION AND IMPURITY BAND CONDUCTION IN GESE PHYSICA B & C, 1981, 105 (1-3): : 70 - 73