THIN SIO2 INSULATORS GROWN BY RAPID THERMAL-OXIDATION OF SILICON

被引：52

|

作者：

MOSLEHI, MM

SHATAS, SC

SARASWAT, KC

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.96278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1353 / 1355

页数：3

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