THIN SIO2 INSULATORS GROWN BY RAPID THERMAL-OXIDATION OF SILICON

被引：52
|
作者：
MOSLEHI, MM
SHATAS, SC
SARASWAT, KC
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期
关键词：
D O I：
10.1063/1.96278
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1353 / 1355
页数：3
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