LONGITUDINAL MODE BEHAVIORS OF 1.5 MU-M RANGE GAINASP-INP DISTRIBUTED FEEDBACK LASERS

被引：42

作者：

ITAYA, Y ^{[1
]}

MATSUOKA, T ^{[1
]}

KUROIWA, K ^{[1
]}

IKEGAMI, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,ATZUGI ELECT COMMUN LAB,ATSUGI,KANAGAWA 24301,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1984年 / 20卷 / 03期

关键词：

D O I：

10.1109/JQE.1984.1072378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：230 / 235

页数：6

共 50 条

[41] 1.5-1.6-MU-M GAINASP-INP INTEGRATED TWIN-GUIDE LASERS WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTORS
UTAKA, K
KOBAYASHI, K
KISHINO, K
SUEMATSU, Y
ELECTRONICS LETTERS, 1980, 16 (12) : 455 - 456
[42] 1.5 MU-M REGION INP-GAINASP BURIED HETEROSTRUCTURE LASERS ON SEMI-INSULATING SUBSTRATES
MATSUOKA, T
TAKAHEI, K
NOGUCHI, Y
NAGAI, H
ELECTRONICS LETTERS, 1981, 17 (01) : 12 - 14
[43] WAVELENGTH STABILIZATION OF 1.5 MU-M GAINASP-INP BUNDLE-INTEGRATED-GUIDE DISTRIBUTED-BRAGG-REFLECTOR (BIG-DBR) LASERS INTEGRATED WITH WAVELENGTH TUNING REGION
TOHMORI, Y
OOHASHI, H
KATO, T
ARAI, S
KOMORI, K
SUEMATSU, Y
ELECTRONICS LETTERS, 1986, 22 (03) : 138 - 140
[44] LPE AND CHARACTERISTICS OF GAINASP-INP 1.5MU-M REGION LASER-DIODES
NAGAI, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 183 - 188
[45] THE ANNEALING OF DOUBLE-HETEROSTRUCTURE GAINASP-INP 1.3 MU-M LASER-DIODES
FATT, YS
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (01) : 30 - 39
[46] 1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY
ARAI, S
SUEMATSU, Y
ITAYA, Y
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 197 - 205
[47] THRESHOLD-WAVELENGTH AND THRESHOLD-TEMPERATURE DEPENDENCES OF GAINASP-INP LASERS WITH FREQUENCY SELECTIVE FEEDBACK OPERATING IN THE 1.3-MU-M AND 1.5-MU-M REGIONS
TSANG, WT
OLSSON, NA
LOGAN, RA
APPLIED PHYSICS LETTERS, 1983, 43 (02) : 154 - 156
[48] EXTREMELY LOW-THRESHOLD 1.3 MU-M GAINASP-INP DFB PPIBH LASER
OHKURA, Y
YOSHIDA, N
TAKEMOTO, A
KAKIMOTO, S
ELECTRONICS LETTERS, 1988, 24 (24) : 1508 - 1510
[49] CW OPERATION OF 1.5 - 1.6 MU-M WAVELENGTH GAINASP-INP BURIED-HETEROSTRUCTURE INTEGRATED TWIN-GUIDE LASER WITH DISTRIBUTED BRAGG REFLECTOR
KOBAYASHI, K
UTAKA, K
ABE, Y
SUEMATSU, Y
ELECTRONICS LETTERS, 1981, 17 (11) : 366 - 368
[50] 1.3-MU-M-WAVELENGTH MODE CONTROLLED GAINASP-INP ETCHED LASER
MORIKI, K
IGA, K
UCHIDA, M
WAKAO, K
KUNIKANE, T
ELECTRONICS LETTERS, 1981, 17 (16) : 559 - 560

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