GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:88
|
作者
FEKETA, D
CHAN, KT
BALLANTYNE, JM
EASTMAN, LF
机构
关键词
D O I
10.1063/1.97258
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1659 / 1660
页数:2
相关论文
共 50 条
  • [31] INGAPINGAASP/GAAS 0.808-MU-M SEPARATE-CONFINEMENT LASER-DIODES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    ELIASHEVICH, JD
    ELIASHEVICH, I
    MOBARHAN, K
    KOLEV, E
    WANG, LJ
    GARBUZOV, DZ
    RAZEGHI, M
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (02) : 132 - 134
  • [32] ALINGAAS ALGAAS STRAINED QUANTUM-WELL RIDGE WAVE-GUIDE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    HUGHES, NA
    CONNOLLY, JC
    GILBERT, DB
    MURPHY, KB
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (02) : 113 - 115
  • [33] STRAINED-LAYER INGAAS GAAS ALGAAS BURIED-HETEROSTRUCTURE QUANTUM-WELL LASERS BY 3-STEP SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    COCKERILL, TM
    FORBES, DV
    DANTZIG, JA
    COLEMAN, JJ
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 441 - 445
  • [34] THERMAL-PROCESSING OF STRAINED-LAYER INGAAS/GAAS QUANTUM-WELL INTERFACE
    ZHANG, G
    PESSA, M
    APPLIED SURFACE SCIENCE, 1994, 75 : 274 - 278
  • [35] OSCILLATORY PHOTOLUMINESCENCE EXCITATION IN INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL STRUCTURES
    AMBRAZEVICIUS, G
    MARCINKEVICIUS, S
    LIDEIKIS, T
    NAUDZIUS, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) : 41 - 44
  • [36] GROWTH OF INGAAS/INP QUANTUM-WELL STRUCTURES BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    MCCRARY, VR
    LEE, JW
    CHU, SNG
    SLUSKY, SEG
    BRELVI, MA
    LIVESCU, G
    THOMAS, PM
    KETELSEN, LJP
    ZILKO, JL
    MICROELECTRONIC ENGINEERING, 1992, 18 (1-2) : 75 - 88
  • [37] DISTRIBUTED FEEDBACK STRAINED LAYER QUANTUM-WELL HETEROSTRUCTURE 980 NM LASER FABRICATED BY 2-STEP METALORGANIC CHEMICAL VAPOR-DEPOSITION
    COCKERILL, TM
    HONIG, J
    FORBES, DV
    COLEMAN, JJ
    APPLIED PHYSICS LETTERS, 1993, 62 (08) : 820 - 822
  • [38] 1.3-MU-M INASYP1-Y-INP STRAINED-LAYER QUANTUM-WELL LASER-DIODES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    KASUKAWA, A
    NAMEGAYA, T
    FUKUSHIMA, T
    IWAI, N
    KIKUTA, T
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1528 - 1535
  • [39] Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy
    Piwonski, T
    Sajewicz, P
    Kubica, JM
    Zbroszczyk, M
    Reginski, K
    Mroziewicz, B
    Bugajski, M
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2001, 29 (02) : 75 - 77
  • [40] MONTE-CARLO STUDIES ON THE WELL-WIDTH DEPENDENCE OF CARRIER CAPTURE TIME IN GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE QUANTUM-WELL LASER STRUCTURES
    LAM, Y
    SINGH, J
    APPLIED PHYSICS LETTERS, 1993, 63 (14) : 1874 - 1876