INCORPORATION OF HYDROGEN IN CDTE AND HGTE EPITAXIAL LAYERS GROWN BY MOCVD

被引：8
|
作者：
SVOB, L
MARFAING, Y
DESJONQUERES, F
DRUILHE, R
机构：
[1] Laboratoire de Physique des Solides de Bellevue, C.N.R.S, 1, Place A. Briand
来源：
PHYSICA B | 1991年 / 170卷 / 1-4期
关键词：
Hydrogen - Physics - Solid State - Semiconducting Cadmium Compounds - Semiconducting Tellurium Compounds - Spectroscopy;
D O I：
10.1016/0921-4526(91)90175-E
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The incorporation of hydrogen into MOCVD-grown layers of CdTe, HgTe and CdHgTe using H2 as the vector gas has been studied. Concentrations of incorporated H going from 6.5 x 10(17) cm-3 to 5 x 10(18) cm-3 have been found by SIMS in CdTE layers. This concentration decreases with increasing growth temperature and decreasing bond strength of the host material.
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页码：550 / 552
页数：3
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