共 50 条
- [31] PHOTOLUMINESCENCE AND CAPACITANCE-SPECTROSCOPY DIAGNOSTICS OF EPITAXIAL GAAS FILMS GROWN ON SILICON SUBSTRATES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (09): : 949 - 952
- [36] Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt Semiconductors, 1997, 31 : 806 - 808
- [37] On the Transition from Tin-Rich to Antimony-Rich European White Soda-Glass Trade Beads for the Senecas of Northeastern North America Journal of Radioanalytical and Nuclear Chemistry, 2000, 244 : 559 - 566
- [38] Properties of epitaxial gallium arsenide prepared from bismuth-based fluxed melts Tech Phys Lett, 11 (873):
- [39] INFLUENCE OF ISOVALENT DOPING WITH INDIUM ON THE PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE FILMS GROWN FROM THE VAPOR-PHASE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (05): : 543 - 546
- [40] TEM Study of the Structure of Gallium Nitride Epitaxial Films Grown on Substrates with Different Interface Morphologies JOURNAL OF SURFACE INVESTIGATION, 2007, 1 (03): : 269 - 272