THE EFFECTS OF ARSENIC OVERPRESSURE IN METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS AND INAS

被引：4
|
作者：
TU, CW
LIANG, BW
CHIN, TP
机构：
[1] Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(90)90360-W
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
GaAs and InAS grown by metalorganic molecular beam epitaxy (MOMBE) using trimethyl compounds and arsenic are compared. Not only the substrate temperature but also the arsenic overpressure play a very important role in affecting the growth rates. A simple growth kinetics model for MOMBE of InAs can explain quantitatively the growth behavior for various substrate temperatures and arsenic pressure. © 1990.
引用
收藏
页码：195 / 198
页数：4
相关论文
共 50 条
  • [41] INVESTIGATION OF INAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS SUBSTRATES
    DVORYANKINA, GG
    DVORYANKIN, VF
    PETROV, AG
    KUDRYASHOV, AA
    POROTIKOV, AP
    VARAKSIN, GA
    KHUSID, LB
    INORGANIC MATERIALS, 1987, 23 (11) : 1569 - 1574
  • [42] INTERFACE STRUCTURE OF INAS GROWN ON GAAS(001) SURFACES BY MOLECULAR-BEAM EPITAXY
    FAWCETT, PN
    JOYCE, BA
    ZHANG, X
    PASHLEY, DW
    JOURNAL OF CRYSTAL GROWTH, 1992, 116 (1-2) : 81 - 86
  • [43] GROWTH OF A (GAAS)N/(INAS)N SUPERLATTICE SEMICONDUCTOR BY MOLECULAR-BEAM EPITAXY
    OHNO, H
    KATSUMI, R
    TAKAMA, T
    HASEGAWA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09): : L682 - L684
  • [44] MECHANISMS OF STRAINED ISLAND FORMATION IN MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(100)
    CHEN, P
    XIE, Q
    MADHUKAR, A
    CHEN, L
    KONKAR, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2568 - 2573
  • [45] THE NUCLEATION AND GROWTH BY MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(110) MISORIENTED SUBSTRATES
    ZHANG, XM
    PASHLEY, DW
    KAMIYA, I
    NEAVE, JH
    JOYCE, BA
    JOURNAL OF CRYSTAL GROWTH, 1995, 147 (1-2) : 234 - 237
  • [46] MOLECULAR-BEAM EPITAXY OF INAS AND ITS INTERACTION WITH A GAAS OVERLAYER ON VICINAL GAAS (001) SUBSTRATES
    LIN, XW
    LILIENTALWEBER, Z
    WASHBURN, J
    WEBER, ER
    SASAKI, A
    WAKAHARA, A
    NABETANI, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2562 - 2567
  • [47] METALORGANIC CVD OF GAAS IN A MOLECULAR-BEAM SYSTEM
    VEUHOFF, E
    PLETSCHEN, W
    BALK, P
    LUTH, H
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 30 - 34
  • [48] FABRICATION OF GAAS QUANTUM WIRES BY METALORGANIC MOLECULAR-BEAM EPITAXY AND THEIR OPTICAL-PROPERTIES
    NOMURA, Y
    GOTO, S
    MORISHITA, Y
    MATSUYAMA, I
    KATAYAMA, Y
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 332 - 335
  • [49] CdO epitaxial layers grown on (001) GaAs surfaces by metalorganic molecular-beam epitaxy
    Ashrafi, ABMA
    Kumano, H
    Suemune, I
    Ok, YW
    Seong, TY
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 518 - 522
  • [50] METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH-CHARACTERISTICS OF GAAS USING TRIETHYLGALLIUM AND TRISDIMETHYLAMINOARSENIC
    LIU, XF
    ASAHI, H
    INOUE, K
    MARX, D
    ASAMI, K
    MIKI, K
    GONDA, S
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) : 1952 - 1958
12345