Modeling and simulation of the structure based on the semiconductor III-V for solar cell application

This work focuses on modeling and simulation of structure based semiconductors III.V for solar cell application. We first studied the influence of the concentration of indium on the various parameters of the alloy and GaInAsSb on GaAs substrate. Indeed, the increased density of indium decreases the bandgap energy of the alloy, which is very interesting to absorb maximum solar spectrum. We can obtain this structure by gap energy less than 1 eV. The study includes graphs showing the variations of the different factors affecting the conversion efficiency as a function of indium concentration and the thickness of the semiconductor layer. The most appropriate structure for this work is GaInAsSb because it has improved performance.