DIAMOND EPITAXIAL-GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH PURE METHANE

被引：13

作者：

NISHIMORI, T ^{[1
]}

SAKAMOTO, H ^{[1
]}

TAKAKUWA, Y ^{[1
]}

KONO, S ^{[1
]}

机构：

[1] TOHOKU UNIV, SCI MEASUREMENTS RES INST, AOBA KU, SENDAI, MIYAGI 98077, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 10A期

关键词：

DIAMOND; EPITAXIAL FILM; GAS SOURCE MBE; METHANE; RHEED; XPS; SELECTIVE GROWTH;

D O I：

10.1143/JJAP.34.L1297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond epitaxial films with a thickness of 200-350 Angstrom have been successfully grown on C(100) surfaces by gas-source molecular beam epitaxy (GSMBE) with methane without addition of hydrogen or oxygen. The activation energy was measured by a selective growth method using Ta-patterned substrates to be 15 kcal/mol. This value is close to the activation energy of H-2 desorption on C(100), suggesting that the diamond epitaxial growth rate by this GSMBE is limited by hydrogen desorption.

引用

页码：L1297 / L1300

页数：4

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