共 50 条
- [21] INDUCTIVE PROPERTIES OF SELENIUM P-N JUNCTIONS SUBJECTED TO A FORWARD BIAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (09): : 1181 - &
- [24] Limitations on chopping frequency for photoreflectance spectroscopy of p-n GaAs junctions APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2022, 128 (12):
- [27] PHOTOVOLTAIC EFFECT IN GAAS P-N JUNCTIONS AND SOLAR ENERGY CONVERSION PHYSICAL REVIEW, 1956, 101 (03): : 1208 - 1209
- [28] RADIATIVE RECOMBINATION IN GAAS P-N JUNCTIONS FORMED BY BERYLLIUM DIFFUSION SOVIET PHYSICS-SOLID STATE, 1964, 6 (06): : 1496 - 1497
- [29] COHERENT RADIATION OF GAAS P-N JUNCTIONS PREPARED BY DIFFUSION OF BERYLLIUM SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (07): : 1798 - &