SUBMICROMETER ELECTRON-BEAM DIRECT WRITING TECHNOLOGY FOR 1-MBIT DRAM FABRICATION

被引：4
|
作者：
MATSUDA, T
MIYOSHI, K
YAMAGUCHI, R
MORIYA, S
HOSOYA, T
HARADA, K
机构：
[1] NTT Public Corp, Kanagawa, Jpn, NTT Public Corp, Kanagawa, Jpn
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期
关键词：
D O I：
10.1109/JSSC.1985.1052280
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
12
引用
收藏
页码：88 / 93
页数：6
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