SLOW RELAXATION PHENOMENA IN FERROELECTRIC-SEMICONDUCTORS

被引：0
|
作者：
GREKOV, AA [1 ]
KAZAKOVA, VV [1 ]
RODIN, AI [1 ]
SAVENKO, FI [1 ]
机构：
[1] ROSTOV DON STATE UNIV,ROSTOV,USSR
来源：
FERROELECTRICS | 1991年 / 117卷 / 1-4期
关键词：
D O I：
10.1080/00150199108222413
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A model of spontaneous polarization screening where the transient is determined by the ionization time constant of deep impurities is proposed. Slow relaxation of electrophysical characteristics is discussed. Using the concepts presented, the functional dependence of relaxation processes as well as the existence of relaxation time set may be explained. © 1991, Taylor & Francis Group, LLC. All rights reserved.
引用
收藏
页码：157 / 164
页数：8
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