A STUDY ON SYNTHESIS OF DIAMOND BY CAPACITIVELY COUPLED RF PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION

被引：12
|
作者：
LEE, SR [1 ]
GALLOIS, B [1 ]
机构：
[1] STEVENS INST TECHNOL LIB, HOBOKEN, NJ 07030 USA
来源：
DIAMOND AND RELATED MATERIALS | 1992年 / 1卷 / 2-4期
关键词：
D O I：
10.1016/0925-9635(92)90031-I
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A capacitively coupled RF plasma-assisted chemical vapor deposition reactor was used to synthesize diamond. A diamond phase (sp3C-C bonds) was detected in the deposits by Raman scattering spectroscopy. Its concentration, measured by core electron energy loss spectroscopy (CEELS), was estimated to be about 40%. The amount of hydrogen in the deposits measured by hydrogen profiling by helium ions was of the order of 1% regardless of the growth conditions. These results suggested a possibility of diamond synthesis by a capacitively coupled RF PACVD technique. © 1992.
引用
收藏
页码：235 / 238
页数：4
相关论文
共 50 条
  • [21] PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION OF DIAMOND BY HOLLOW-CATHODE ARC-DISCHARGE
    STIEGLER, J
    ROTH, S
    HAMMER, K
    SCHARFF, W
    THIN SOLID FILMS, 1992, 219 (1-2) : 4 - 6
  • [22] BLUE AND GREEN CATHODOLUMINESCENCE OF SYNTHESIZED DIAMOND FILMS FORMED BY PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION
    KAWARADA, H
    NISHIMURA, K
    ITO, T
    SUZUKI, J
    MAR, KS
    YOKOTA, Y
    HIRAKI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (04): : L683 - L686
  • [23] SYNTHESIS OF DIAMOND USING FE CATALYSTS BY RF PLASMA CHEMICAL VAPOR-DEPOSITION METHOD
    SHIMADA, Y
    MUTSUKURA, N
    MACHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (6B): : 1958 - 1963
  • [24] MICROSTRUCTURES OF DIAMOND FORMED BY PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITION
    KAAE, JL
    GANTZEL, PK
    CHIN, J
    WEST, WP
    CARBON, 1990, 28 (06) : 803 - 803
  • [25] PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION OF HARD COATINGS WITH METALLOORGANIC COMPOUNDS
    RIE, KT
    GEBAUER, A
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 139 (1-2): : 61 - 66
  • [26] THE APPLICATION OF HARD COATINGS PRODUCED BY PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION
    LI, SZ
    ZHAO, C
    XU, X
    SHI, YL
    YANG, HS
    XIE, Y
    HUANG, W
    SURFACE & COATINGS TECHNOLOGY, 1990, 43-4 (1-3): : 1007 - 1014
  • [27] HIGH-RATE JET PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION
    BARDOS, L
    DUSEK, V
    THIN SOLID FILMS, 1988, 158 (02) : 265 - 270
  • [28] THE EFFECT OF ARGON DURING THE PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION OF TIN
    HILTON, MR
    SALMERON, M
    SOMORJAI, GA
    THIN SOLID FILMS, 1988, 167 (1-2) : L31 - L34
  • [29] LOW-TEMPERATURE SYNTHESIS OF DIAMOND FILMS IN THERMOASSISTED RF PLASMA CHEMICAL VAPOR-DEPOSITION
    WATANABE, I
    MATSUSHITA, T
    SASAHARA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A): : 1428 - 1431
  • [30] HOLLOW-CATHODE PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITION OF DIAMOND
    SINGH, B
    MESKER, OR
    LEVINE, AW
    ARIE, Y
    APPLIED PHYSICS LETTERS, 1988, 52 (20) : 1658 - 1660
12345