INFLUENCE OF ELECTRON-ELECTRON INTERACTION ON ENERGY RELAXATION-TIME OF N-TYPE SI

被引：0

作者：

DENIS, VI ^{[1
]}

KANTSLERIS, ZV ^{[1
]}

机构：

[1] ACAD SCI LISSR,SEMICOND PHYS INST,VILNIUS,LISSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 8卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：918 / 918

页数：1

共 50 条

[1] INFLUENCE OF UNIAXIAL STRESS AND ELECTRON-ELECTRON SCATTERING ON PHENOMENOLOGICAL CONDUCTIVITY RELAXATION-TIME IN N-TYPE GERMANIUM
DIENYS, V
KANCLERIS, Z
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1976, 78 (02): : 757 - 765
[2] CARRIER-DENSITY DEPENDENCE OF THE PHENOMENOLOGICAL RELAXATION-TIME OF THE ELECTRON-ENERGY IN N-TYPE SI
ASHMONTAS, SP
OLEKAS, AP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (03): : 321 - 323
[3] RELAXATION-TIME OF AN EXCESS ENERGY OF AN ELECTRON-GAS IN N-TYPE INSB
KRIVONOGOV, SN
SMETANNIKOVA, YS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (08): : 954 - 955
[4] INFLUENCE OF ELECTRON-ELECTRON SCATTERING ON HALL-EFFECT IN N-TYPE GE AND N-TYPE SI
PINCHUK, II
TOMCHUK, PM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 528 - 529
[5] INFLUENCE OF ELECTRON-ELECTRON SCATTERING ON THE HALL EFFECT IN n-TYPE Ge AND n-TYPE Si.
Pinchuk, I.I.
Tomchuk, P.M.
1600, (09):
[6] INFLUENCE OF ELECTRON-ELECTRON INTERACTION ON APPEARANCE OF A NEGATIVE TRANSVERSE CONDUCTIVITY IN N-TYPE GE
GRIGOREV, NN
DYKMAN, IM
TOMCHUK, PM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 706 - 710
[7] ELECTRON-ENERGY RELAXATION-TIME IN SI AND GE
COSTATO, M
FONTANESI, S
REGGIANI, L
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (03) : 547 - 564
[8] INFLUENCE OF UNIAXIAL STRESS ON PHENOMENOLOGICAL ENERGY RELAXATION-TIME IN N-TYPE SILICON
DIENYS, V
KANCLERIS, Z
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (02): : K209 - K211
[9] INFLUENCE OF MAGNETIC-FIELD ON THE ENERGY RELAXATION-TIME IN N-TYPE GERMANIUM AND SILICON
DIENYS, V
KANCLERIS, Z
TVARDAUSKAS, H
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 97 (01): : K13 - K15
[10] CARRIER-DENSITY DEPENDENCE OF THE PHENOMENOLOGICAL RELAXATION TIME OF THE ELECTRON ENERGY IN n-TYPE Si.
Ashmontas, S.P.
Olekas, A.P.
Soviet physics. Semiconductors, 1980, 14 (03): : 321 - 323

← 1 2 3 4 5 →