共 50 条
- [1] CARRIER-DENSITY DEPENDENCE OF THE PHENOMENOLOGICAL RELAXATION-TIME OF THE ELECTRON-ENERGY IN N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (03): : 321 - 323
- [2] CALCULATION OF THE ENERGY RELAXATION TIME FROM OSCILLATIONS OF THE TRANSVERSE CONDUCTIVITY IN N-TYPE Ge AND Si. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (05): : 676 - 677
- [3] CARRIER-DENSITY DEPENDENCES OF THE ANISOTROPY PARAMETER OF THE DRAG THERMOELECTRIC-POWER OF N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (11): : 1279 - 1281
- [4] INFLUENCE OF ELECTRON-ELECTRON INTERACTION ON ENERGY RELAXATION-TIME OF N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 918 - 918
- [6] CARRIER-DENSITY DEPENDENCE OF MAGNETO-PIEZORESISTANCE OF N-TYPE GE UNDER MIXED SCATTERING CONDITIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 142 - 143
- [7] DEPENDENCE OF THE CARRIER LIFETIME IN N-TYPE INSB ON THE ELECTRON-DENSITY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (02): : 222 - 223
- [8] RAMAN-SCATTERING BY INTERVALLEY CARRIER-DENSITY FLUCTUATIONS IN N-TYPE SI - INTERVALLEY AND INTRAVALLEY MECHANISMS PHYSICAL REVIEW B, 1985, 32 (02): : 924 - 929