VALENCE CHARGE-DENSITY IN INDIUM-ANTIMONIDE

被引：6

作者：

BILDERBACK, DH ^{[1
]}

COLELLA, R ^{[1
]}

机构：

[1] PURDUE UNIV,PHYS DEPT,W LAFAYETTE,IN 47907

来源：

PHYSICAL REVIEW LETTERS | 1975年 / 35卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.35.858

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：858 / 860

页数：3

共 50 条

[31] MAGNETIC SURFACE QUANTIZATION IN INDIUM-ANTIMONIDE
SKOK, EM
STUDENIKIN, SA
HEFEL, H
PASCHER, H
JETP LETTERS, 1983, 37 (10) : 554 - 557
[32] NATURE OF DEEP ACCEPTORS IN INDIUM-ANTIMONIDE
ZAITOV, FA
GORSHKOVA, OV
POLYAKOV, AY
KEVORKOV, MN
POPKOV, AN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (06): : 711 - 711
[33] NEAR ORDER IN MOLTEN INDIUM-ANTIMONIDE
KREBS, H
SUTTER, J
THURN, H
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1974, 92 (4-6): : 349 - 353
[34] HARDNESS ANISOTROPY AND POLARITY IN INDIUM-ANTIMONIDE
ROBERTS, SG
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 54 (01): : 37 - 45
[35] ANODIC AND CATHODIC PROCESSES ON INDIUM-ANTIMONIDE
EFIMOV, EA
ERUSALIMCHIK, IG
MOTALEVA, NV
NURGALIEVA, AA
SOVIET ELECTROCHEMISTRY, 1976, 12 (05): : 701 - 704
[36] ALLOYED PLANAR DIODES IN INDIUM-ANTIMONIDE
RIEDLING, K
OLCAYTUG, F
FALLMANN, W
ELECTRONICS LETTERS, 1979, 15 (18) : 572 - 573
[37] GALVANOMAGNETIC LUMINESCENCE OF INDIUM-ANTIMONIDE - COMMENT
MORIMOTO, T
CHIBA, M
APPLIED PHYSICS LETTERS, 1986, 49 (09) : 537 - 537
[38] MISCIBILITY OF BISMUTH AND CADMIUM IN INDIUM-ANTIMONIDE
LAPKINA, IA
SOROKINA, OV
SHCHERBOVSKII, EY
INORGANIC MATERIALS, 1990, 26 (07) : 1318 - 1319
[39] PHYSICOCHEMICAL BEHAVIOR OF THALLIUM IN INDIUM-ANTIMONIDE
EVGENEV, SB
SOROKINA, OV
ZINOVEV, VG
INORGANIC MATERIALS, 1985, 21 (12) : 1747 - 1750
[40] DEEP IMPURITY LEVELS IN INDIUM-ANTIMONIDE
KOLESNIKOV, AA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1972, (10): : 38 - +

← 1 2 3 4 5 →