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- [41] THE GROWTH OF ALGAAS-GAAS LASERS ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITIONJOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 434 - 442DUPUIS, RDPINZONE, CJ
- [42] NEW MECHANISM FOR SI INCORPORATION IN GAAS-ON-SI HETEROEPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1989, 55 (16) : 1674 - 1676NOZAKI, SMURRAY, JJWU, ATGEORGE, TWEBER, ERUMENO, M
- [43] GROWTH AND ASSESSMENT OF CDS AND CDSE LAYERS PRODUCED ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITIONJOURNAL OF CRYSTAL GROWTH, 1988, 91 (1-2) : 135 - 140HALSALL, MPDAVIES, JJNICHOLLS, JECOCKAYNE, BWRIGHT, PJRUSSELL, GJ
- [44] PLASMA-CONTROLLED DEPOSITION OF GAAS AND GAASP BY METALORGANIC CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1988, 52 (09) : 726 - 727HUELSMAN, ADZIEN, LREIF, R
- [45] ANALYSIS OF DEPOSITION SELECTIVITY IN SELECTIVE EPITAXY OF GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITIONJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (11): : 2351 - 2357YAMAGUCHI, KOKAMOTO, K
- [46] METALORGANIC CHEMICAL VAPOR-DEPOSITION AND PHOTOLUMINESCENCE OF NM GAAS DOPING SUPERLATTICESJOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1696 - 1697ROENTGEN, PGOETZ, KHBENEKING, H
- [47] SI SUBSTRATE PREPARATION FOR GAAS SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITIONJOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 341 - 345FUJITA, KSHIBA, YYAMAMOTO, T
- [48] INVESTIGATION OF TRIETHYLARSENIC AS A REPLACEMENT FOR ARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAASAPPLIED PHYSICS LETTERS, 1988, 52 (18) : 1475 - 1477LUM, RMKLINGERT, JKWYNN, ASLAMONT, MG
- [49] ULTRAVIOLET LASER-ASSISTED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAASJOURNAL OF APPLIED PHYSICS, 1989, 66 (10) : 5001 - 5008YORK, PKEDEN, JGCOLEMAN, JJFERNANDEZ, GEBEERNINK, KJ
- [50] LATERAL GROWTH-PROCESS OF GAAS OVER TUNGSTEN GRATINGS BY METALORGANIC CHEMICAL VAPOR-DEPOSITIONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) : 2445 - 2453ASAI, HANDO, S