COMPUTER-SIMULATION OF CURRENT VOLTAGE CHARACTERISTICS IN AMORPHOUS-SILICON P-N DIODE STRUCTURES UNDER IMPURITY PHOTOEXCITATION

被引：0
|
作者：
AZIMOV, SA
KARAGEORGYALKALAEV, PM
LEIDERMAN, AY
RUBIN, VS
机构：
[1] Acad of Sciences of the Uzbekian SSR, Tashkent, USSR, Acad of Sciences of the Uzbekian SSR, Tashkent, USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 01期
关键词：
D O I：
10.1002/pssa.2210940136
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
9
引用
收藏
页码：299 / 304
页数：6
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