COMPUTER-SIMULATION OF AMORPHOUS-SILICON CHARGE-COUPLED-DEVICES

被引：0
|
作者：
YUE, JH
SEKINE, S
NAKAMURA, S
ODA, S
MATSUMURA, M
机构：
[1] Tokyo Inst of Technology, Tokyo, Jpn
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 10期
关键词：
D O I：
10.1109/16.7370
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
13
引用
收藏
页码：1664 / 1671
页数：8
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