COMPUTER-SIMULATION OF AMORPHOUS-SILICON CHARGE-COUPLED-DEVICES

被引：0

|

作者：

YUE, JH

SEKINE, S

NAKAMURA, S

ODA, S

MATSUMURA, M

机构：

[1] Tokyo Inst of Technology, Tokyo, Jpn

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 10期

关键词：

D O I：

10.1109/16.7370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

13

引用

收藏

页码：1664 / 1671

页数：8

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