EPITAXIAL-GROWTH ON SIMOX WAFERS

被引:0
|
作者
LAM, HW [1 ]
机构
[1] LAM ASSOCIATES,DALLAS,TX 75374
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C95 / C95
页数:1
相关论文
共 50 条
  • [31] THE SELECTIVE EPITAXIAL-GROWTH OF SILICON
    GOULDING, MR
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 17 (1-3): : 47 - 67
  • [32] EPITAXIAL-GROWTH OF TELLURIUM BY ELECTRODEPOSITION
    QIU, CX
    SHIH, I
    MATERIALS LETTERS, 1989, 8 (08) : 309 - 312
  • [33] THE SELECTIVE EPITAXIAL-GROWTH OF SILICON
    GOULDING, MR
    JOURNAL DE PHYSIQUE IV, 1991, 1 (C2): : 745 - 778
  • [34] SELECTIVE EPITAXIAL-GROWTH OF SILICON
    OSENBACH, JW
    SCHIMMEL, DG
    FEYGENSON, A
    BASTEK, JJ
    TSAI, JCC
    PRAEFCKE, HC
    BONATO, EW
    JOURNAL OF MATERIALS RESEARCH, 1991, 6 (11) : 2318 - 2323
  • [35] EPITAXIAL-GROWTH OF INDIUM NITRIDE
    WAKAHARA, A
    TSUCHIYA, T
    YOSHIDA, A
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 385 - 389
  • [36] KINETICS OF EPITAXIAL-GROWTH AND ROUGHENING
    FAMILY, F
    AMAR, JG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 30 (2-3): : 149 - 166
  • [37] NEW SLANT ON EPITAXIAL-GROWTH
    VVEDENSKY, D
    PHYSICS WORLD, 1994, 7 (03) : 30 - 31
  • [38] ROLE OF STEPS IN EPITAXIAL-GROWTH
    POND, K
    GOSSARD, AC
    LORKE, A
    PETROFF, PM
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 30 (2-3): : 121 - 125
  • [39] ANNEALING AFTER EPITAXIAL-GROWTH
    ORNER, CH
    LUCARINI, V
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : C231 - C231
  • [40] EPITAXIAL-GROWTH OF ZNS ON SAPPHIRE
    AKSENOVA, LL
    SEMILETO.SA
    KOVDA, AV
    SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1972, 16 (05): : 933 - &