QUARTER-MICROMETER LOW-NOISE PSEUDOMORPHIC GAAS HEMTS WITH EXTREMELY LOW DEPENDENCE OF THE NOISE-FIGURE ON DRAIN SOURCE CURRENT

被引：15
|
作者：
WENGER, J
机构：
[1] Daimler-Benz AG Research Center, D-7900, Ulm
来源：
IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 01期
关键词：
D O I：
10.1109/55.215086
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quarter-micrometer pseudomorphic (PM) AlGaAs-InGaAs-GaAs HEMT's with an In-mole fraction of 21% have been successfully developed, fabricated, and characterized. The devices are realized in a commercial technology by using a multiple-gate-finger layout with air bridges for the interconnection of the source pads and a Si3N4 passivation. PM HEMT's with a gate width of 6 x 20 mum exhibit state-of-the-art noise figures of 0.65 and 0.82 dB with an associated gain of 14.5 and 11.5 dB at 12 and 18 GHz, respectively. The noise figure shows the lowest dependence on the drain-source current yet reported with DELTAF(min) < 0.12 dB for a wide biasing range from 25% I(dss) up to 150% I(dss) at 12 GHz when I(dss) = 170 ... 250 mA / mm.
引用
收藏
页码：16 / 18
页数：3
相关论文
共 50 条
  • [21] Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors
    Ichino, Shinya
    Mawaki, Takezo
    Teramoto, Akinobu
    Kuroda, Rihito
    Park, Hyeonwoo
    Wakashima, Shunichi
    Goto, Tetsuya
    Suwa, Tomoyuki
    Sugawa, Shigetoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [22] LOW-NOISE AC DC CURRENT SOURCE WITH CONTINUOUS ZERO CROSSING
    RUGGIERO, ST
    SCHWARZBEK, S
    HOWARD, RE
    TRACK, E
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1986, 57 (07): : 1444 - 1446
  • [23] A 60-GHz High-Gain, Low-Power, 3.7-dB Noise-Figure Low-Noise Amplifier in 90-nm CMOS
    Kuo, Hsin-Chih
    Chuang, Huey-Ru
    2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2013, : 584 - 587
  • [24] VERY LOW-NOISE AL0.3GA0.7AS/GA0.65IN0.35AS/GAAS SINGLE QUANTUM-WELL PSEUDOMORPHIC HEMTS
    CHAO, PC
    HO, P
    DUH, KHG
    SMITH, PM
    BALLINGALL, JM
    JABRA, AA
    LEWIS, N
    HALL, EL
    ELECTRONICS LETTERS, 1990, 26 (01) : 27 - 28
  • [25] PROCESS-INDUCED LEAKAGE CURRENT IN A LOW-NOISE GAAS-MESFET
    FOLKES, PA
    CHANG, CC
    LANE, E
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : 1417 - 1423
  • [26] An extremely low-noise heralded single-photon source: A breakthrough for quantum technologies
    Brida, G.
    Degiovanni, I. P.
    Genovese, M.
    Piacentini, F.
    Traina, P.
    Della Frera, A.
    Tosi, A.
    Shehata, A. Bahgat
    Scarcella, C.
    Gulinatti, A.
    Ghioni, M.
    Polyakov, S. V.
    Migdall, A.
    Giudice, A.
    APPLIED PHYSICS LETTERS, 2012, 101 (22)
  • [27] 94-GHZ 0.1-MU-M T-GATE LOW-NOISE PSEUDOMORPHIC INGAAS HEMTS
    TAN, KL
    DIA, RM
    STREIT, DC
    LIN, TY
    TRINH, TQ
    HAN, AC
    LIU, PH
    CHOW, PMD
    YEN, HC
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (12) : 585 - 587
  • [28] Low-noise computer-controlled current source for quantum coherence experiments
    Linzen, S
    Robertson, TL
    Hime, T
    Plourde, BLT
    Reichardt, PA
    Clarke, J
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (08): : 2541 - 2544
  • [29] PSEUDOMORPHIC N-INGAP/INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS FOR LOW-NOISE AMPLIFIERS
    TAKIKAWA, M
    JOSHIN, K
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (08) : 406 - 408
  • [30] 60-GHZ PSEUDOMORPHIC AL025GA075AS/IN028GA072AS LOW-NOISE HEMTS
    TAN, KL
    DIA, RM
    STREIT, DC
    SHAW, LK
    HAN, AC
    SHOLLEY, MD
    LIU, PH
    TRINH, TQ
    LIN, T
    YEN, HC
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (01) : 23 - 25
12345