共 50 条
- [42] GAS SOURCE MOLECULAR-BEAM EPITAXY MECHANISMS OF REACTIONS OF ORGANOMETALLIC COMPOUNDS WITH SURFACES, 1989, 198 : 267 - 277
- [43] HIGH-PERFORMANCE INGAASP/INP SEMICONDUCTOR QUANTUM-WELL LASERS REALIZED BY GAS SOURCE MOLECULAR-BEAM EPITAXY JOURNAL DE PHYSIQUE III, 1992, 2 (09): : 1727 - 1738
- [46] Effect of strain compensation on crystalline quality for InGaAs/InAlP strained multiple quantum well structures on InP grown by gas-source molecular beam epitaxy Naniwae, Kouichi, 1600, Publ by JJAP, Minato-ku, Japan (33):
- [48] Selective growth of InGaAs/InP layers by gas source molecular beam epitaxy with atomic hydrogen irradiation Kuroda, Naotaka, 1600, (32):
- [49] FABRICATION OF INGAAS WIRES BY PREFERENTIAL MOLECULAR-BEAM EPITAXY GROWTH ON CORRUGATED INP SUBSTRATE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 919 - 924