EPITAXIAL-GROWTH OF HGTE BY LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：0
|
作者：
WANG, CH [1 ]
LU, PY [1 ]
WILLIAMS, LM [1 ]
CHU, SNG [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C176 / C176
页数：1
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