INFLUENCE OF STEP AT THE EDGE OF ITO ELECTRODE ON BREAKDOWN VOLTAGE OF AC THIN-FILM EL

被引:0
|
作者
SATO, S [1 ]
WAKITANI, M [1 ]
OKAMOTO, K [1 ]
TAKAHARA, K [1 ]
MIURA, S [1 ]
ANDOH, S [1 ]
机构
[1] FUJITSU LABS LTD,ATSUGI,KANAGAWA 24301,JAPAN
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C326 / C326
页数:1
相关论文
共 50 条
  • [1] THE INFLUENCE OF THE AREA OF A THIN-FILM CAPACITOR ON THE BREAKDOWN VOLTAGE
    BERLICKI, T
    ELECTROCOMPONENT SCIENCE AND TECHNOLOGY, 1981, 9 (02): : 111 - 114
  • [2] AC BREAKDOWN VOLTAGE FOR A THIN DIELECTRIC FLUID FILM
    ANNO, JN
    JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4326 - &
  • [3] EFFICIENCY AND SATURATION IN AC THIN-FILM EL STRUCTURES
    MACH, R
    MULLER, GO
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (02): : 609 - 623
  • [4] BREAKDOWN VOLTAGE IMPROVEMENT FOR THIN-FILM SOI POWER MOSFETS BY A BURIED OXIDE STEP STRUCTURE
    KIM, IJ
    MATSUMOTO, S
    SAKAI, T
    YACHI, T
    IEEE ELECTRON DEVICE LETTERS, 1994, 15 (05) : 148 - 150
  • [5] STUDIES OF TEMPERATURE EFFECTS IN AC THIN-FILM EL DEVICES
    YANG, KW
    OWEN, JT
    SMITH, DH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) : 703 - 708
  • [6] STUDIES OF TEMPERATURE EFFECTS IN AC THIN-FILM EL DEVICES
    YANG, KW
    OWEN, SJT
    PROCEEDINGS OF THE SID, 1981, 22 (04): : 277 - 282
  • [7] ELECTRICAL BREAKDOWN STUDIES WITH AC VOLTAGE ON AL-CEO2-AL THIN-FILM CAPACITORS
    SHEKAR, MC
    BABU, VH
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1984, 3 (09) : 795 - 798
  • [8] VOLTAGE BREAKDOWN OF AG THIN-FILM DEPOSITED ON FRACTAL SURFACE
    WANG, JS
    YE, GX
    XU, YQ
    ZHANG, QR
    CHINESE PHYSICS LETTERS, 1994, 11 (01) : 43 - 45
  • [9] LOW-VOLTAGE AC THIN-FILM ELECTROLUMINESCENT DEVICES
    KOZAWAGUCHI, H
    OHWAKI, J
    TSUJIYAMA, B
    MURASE, K
    PROCEEDINGS OF THE SID, 1982, 23 (03): : 181 - 186
  • [10] Dynamic Response of Thin-Film Semiconductors to AC Voltage Perturbations
    La Mantia, Fabio
    Stojadinovic, Jelena
    Santamaria, Monica
    Di Quarto, Francesco
    CHEMPHYSCHEM, 2012, 13 (12) : 2910 - 2918