MAGNETORESISTANCE IN METALLIC MULTILAYERS BY THE CELLULAR METHOD

被引：0
|
作者：
ITOH, H
INOUE, J
MAEKAWA, S
机构：
[1] Department of Applied Physics, Nagoya University, Nagoya
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1995年 / 140卷
关键词：
D O I：
10.1016/0304-8853(94)01523-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The origin of the difference between the magnetoresistance ratios for parallel and perpendicular currents is ascribed to the anisotropy of the electron mass and the two-dimensional anisotropic distribution of randomness at interfaces. It is also shown that interfacial roughness is favorable to magnetoresistance for parallel current.
引用
收藏
页码：499 / 500
页数：2
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