MONTE-CARLO PARTICLE SIMULATION OF A GAAS SHORT-CHANNEL MESFET

被引：25

作者：

AWANO, Y ^{[1
]}

TOMIZAWA, K ^{[1
]}

HASHIZUME, N ^{[1
]}

KAWASHIMA, M ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 01期

关键词：

D O I：

10.1049/el:19830014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：20 / 21

页数：2

共 50 条

[21] A SHORT-CHANNEL GAAS-FET FABRICATED LIKE A MESFET, BUT OPERATING LIKE A JFET
MORKOC, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04): : L233 - L234
[22] SHORT-CHANNEL GAAS FET FABRICATED LIKE A MESFET, BUT OPERATING LIKE A JFET.
MORKOC, HADIS
1982, V 21 (N 3): : 233 - 234
[23] SHORT-CHANNEL GAAS-FET FABRICATED LIKE A MESFET BUT OPERATING LIKE A JFET
MORKOC, H
ELECTRONICS LETTERS, 1982, 18 (06) : 258 - 259
[24] ENSEMBLE MONTE-CARLO SIMULATION OF A PULSE-DOPED GAAS-MESFET WITH A DOPED-LAYER OF 100A
YAMADA, Y
TOMITA, T
MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 283 - 286
[25] MONTE-CARLO STUDY OF A 50 NM-DUAL-GATE HEMT PROVIDING AGAINST SHORT-CHANNEL EFFECTS
DOLLFUS, P
HESTO, P
SOLID-STATE ELECTRONICS, 1993, 36 (05) : 711 - 715
[26] MONTE-CARLO SIMULATION OF THE HALL-EFFECT IN DEGENERATE GAAS
WILLIAMS, CK
LITTLEJOHN, MA
GLISSON, TH
HAUSER, JR
SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (03) : 201 - 207
[27] Monte-Carlo simulation of MBE growth of GaAs analysis of RHEED
Van Hall, PJ
Kokten, H
Leys, MR
Bosch, M
SURFACE REVIEW AND LETTERS, 1997, 4 (05) : 869 - 872
[28] MONTE-CARLO SIMULATION OF GAAS SCHOTTKY-BARRIER BEHAVIOR
MAZIAR, CM
LUNDSTROM, MS
ELECTRONICS LETTERS, 1987, 23 (02) : 61 - 62
[29] MONTE-CARLO SIMULATION OF NOISE IN GAAS SEMICONDUCTOR-DEVICES
ADAMS, JG
TANG, TW
KAY, LE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (04) : 575 - 581
[30] MONTE CARLO PARTICLE STUDY OF THE INTRINSIC NOISE FIGURE IN GaAs MESFET'S.
Moglestue, C.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1984, CAD-4 (04) : 536 - 540

← 1 2 3 4 5 →