AN MBE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：0
|
作者：
MILLER, DL
HARRIS, JS
ASBECK, PM
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1982年 / 63期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：579 / 580
页数：2
相关论文
共 50 条
  • [31] GAAIAS-GAAS BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTOR
    ANKRI, D
    EASTMAN, LF
    ELECTRONICS LETTERS, 1982, 18 (17) : 750 - 751
  • [32] GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR DEVICE AND IC TECHNOLOGY
    KIM, ME
    OKI, AK
    CAMOU, JB
    GORMAN, GM
    UMEMOTO, DK
    HAFIZI, ME
    PAWLOWICZ, LM
    STOLT, KS
    MULVEY, VM
    ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 671 - 682
  • [33] GAAS/ALGAAS DOUBLE-GRADED HETEROJUNCTION BIPOLAR-TRANSISTOR PREPARED BY MBE WITH PRECISE TEMPERATURE CONTROL USING MODERN CONTROL-THEORY
    OKADA, Y
    ISHIKAWA, T
    NAKANO, Y
    TADA, K
    FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : A191 - A194
  • [34] DC CHARACTERIZATION OF THE ALGAAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTOR
    NAJJAR, FE
    RADULESCU, DC
    CHEN, YK
    WICKS, GW
    TASKER, PJ
    EASTMAN, LF
    APPLIED PHYSICS LETTERS, 1987, 50 (26) : 1915 - 1917
  • [35] SUBMICROMETER SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR PROCESS SUITABLE FOR DIGITAL APPLICATIONS
    LEE, WS
    ENOKI, T
    YAMAHATA, S
    MATSUOKA, Y
    ISHIBASHI, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (12) : 2694 - 2700
  • [36] IN-BASED P-OHMIC CONTACTS TO THE BASE LAYER OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    REN, F
    PEARTON, SJ
    HOBSON, WS
    FULLOWAN, TR
    EMERSON, AB
    SCHLEICH, DM
    APPLIED PHYSICS LETTERS, 1991, 58 (11) : 1158 - 1160
  • [37] A 3-DIMENSIONAL SEMICONDUCTOR-DEVICE SIMULATOR FOR GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR ANALYSIS
    CHAN, HC
    SHIEH, TJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (11) : 2427 - 2432
  • [38] CHARACTERISTICS OF BE+ AND O+ OR H+ COIMPLANTATION IN GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES
    PEARTON, SJ
    REN, F
    WISK, PW
    FULLOWAN, TR
    KOPF, RF
    KUO, JM
    HOBSON, WS
    ABERNATHY, CR
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) : 698 - 703
  • [39] EMITTER GRADING IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    TAIRA, K
    TAKANO, C
    KAWAI, H
    ARAI, M
    APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1278 - 1280
  • [40] DIRECT EXTRACTION OF THE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR SMALL-SIGNAL EQUIVALENT-CIRCUIT
    COSTA, D
    LIU, WU
    HARRIS, JS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (09) : 2018 - 2024
12345