MECHANISM OF OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN SILICON

被引：0

作者：

JACKSON, KA ^{[1
]}

MAHER, DM ^{[1
]}

PATEL, JR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C270 / C270

页数：1

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