共 50 条
- [41] Modification of near-surface silicon layers under cesium ion bombardment Surface Investigation X-Ray, Synchrotron and Neutron Techniques, 1997, 12 (08): : 973 - 987
- [42] MAGNETICALLY STIMULATED CHANGES IN THE ELECTROPHYSICAL PROPERTIES OF THE NEAR-SURFACE SILICON LAYER JOURNAL OF PHYSICAL STUDIES, 2020, 24 (03): : 1 - 5
- [43] LUMINESCENCE ANALYSIS OF AN IMPURITY IN THE NEAR-SURFACE LAYER OF THERMALLY EVAPORATED SILICON APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 375 - 384
- [45] Modification of near-surface layers on silicon under cesium ion bombardment Poverkhnost Fiz Khim Mekh, 8 (90-104):
- [48] Non-contact monitoring of electrical characteristics of silicon surface and near-surface region CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY, 1998, 449 : 250 - 254
- [50] Optimum surface-passivation schemes for near-surface spin defects in silicon carbide PHYSICAL REVIEW MATERIALS, 2024, 8 (05):