LANDAU-LEVEL ELECTRON-SCATTERING AND LIFETIMES IN NORMAL-GAAS AND NORMAL-INP

被引：8

作者：

MITCHELL, K ^{[1
]}

BLACK, A ^{[1
]}

PIDGEON, CR ^{[1
]}

ALLAN, GR ^{[1
]}

KIMMITT, MF ^{[1
]}

GORNIK, E ^{[1
]}

机构：

[1] UNIV INNSBRUCK, INST EXPTL PHYS, A-6020 INNSBRUCK, AUSTRIA

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1987年 / 20卷 / 31期

关键词：

D O I：

10.1088/0022-3719/20/31/022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5217 / 5223

页数：7

共 44 条

[31] DIFFERENT ROLE OF ELECTRON-SCATTERING PROCESSES IN THERMODYNAMICS OF METALS IN NORMAL AND SUPERCONDUCTIVE STATES
MAKAROV, VI
VOLYNSKI.IY
FIZIKA METALLOV I METALLOVEDENIE, 1972, 34 (01): : 200 - &
[32] INELASTIC ELECTRON-SCATTERING TIME OF SUPERCONDUCTING ALUMINUM FILMS SUPERPOSED WITH NORMAL METAL
SHINOZAKI, B
KAWAGUTI, T
FUJIMORI, Y
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1992, 61 (10) : 3678 - 3688
[33] ELECTRON-MOBILITY AND LANDAU-LEVEL WIDTH IN MODULATION-DOPED GAAS-ALXGA1-XAS HETEROJUNCTIONS
VOISIN, P
GULDNER, Y
VIEREN, JP
VOOS, M
MAAN, JC
DELESCLUSE, P
LINH, NT
PHYSICA B & C, 1983, 117 (MAR): : 634 - 636
[34] CONCERNING DIFFERENCE IN ROLE OF ELECTRON-SCATTERING PROCESSES IN THERMODYNAMICS OF A METAL IN NORMAL AND SUPERCONDUCTIVE STATES
MAKAROV, VI
VOLYNSKI.IY
PHYSICS OF METALS AND METALLOGRAPHY, 1972, 34 (01): : 183 - 185
[35] Scanning tunneling spectroscopy on n-InAs(110): Landau-level quantization and scattering of electron waves at dopant atoms
Dombrowski, R.
Wittneven, Chr.
Morgenstern, M.
Wiesendanger, R.
Applied Physics A: Materials Science and Processing, 1998, 66 (SUPPL. 1):
[36] Scanning tunneling spectroscopy on n-InAs(110): Landau-level quantization and scattering of electron waves at dopant atoms
R. Dombrowski
C. Wittneven
M. Morgenstern
R. Wiesendanger
Applied Physics A, 1998, 66 : S203 - S206
[37] Scanning tunneling spectroscopy on n-InAs(110): Landau-level quantization and scattering of electron waves at dopant atoms
Dombrowski, R
Wittneven, C
Morgenstern, M
Wiesendanger, R
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1): : S203 - S206
[38] THE LOW-TEMPERATURE ELECTRICAL-RESISTIVITY OF POTASSIUM - SIZE EFFECTS AND THE ROLE OF NORMAL ELECTRON ELECTRON-SCATTERING
DEGENNARO, S
RETTORI, A
JOURNAL OF PHYSICS F-METAL PHYSICS, 1984, 14 (12): : L237 - L242
[39] ELECTRON-MOBILITY AND MINORITY-CARRIER LIFETIME OF NORMAL-INP SINGLE-CRYSTALS GROWN BY LIQUID-ENCAPSULATED CZOCHRALSKI METHOD
YAMAGUCHI, M
SHINOYAMA, S
UEMURA, C
JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6429 - 6431
[40] INFLUENCE OF THE ELECTRON-BEAM EVAPORATION RATE OF PT AND THE SEMICONDUCTOR CARRIER DENSITY ON THE CHARACTERISTICS OF PT/NORMAL-GAAS SCHOTTKY CONTACTS
MYBURG, G
AURET, FD
JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) : 6172 - 6176

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