Research on VOx uncooled infrared bolometer based on porous silicon

被引：0
|
作者：
Wang, Bin [1 ,2 ]
Lai, Jianjun [1 ,2 ]
Zhao, Erjing [1 ]
Hu, Haoming [1 ]
Chen, Sihai [1 ,2 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Optoelect Sci & Engn, Wuhan 430074, Hubei, Peoples R China
[2] Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China
来源：
FRONTIERS OF OPTOELECTRONICS | 2012年 / 5卷 / 03期
基金：
中国国家自然科学基金;
关键词：
infrared (IR); porous silicon; microbolometer; micromachining;
D O I：
10.1007/s12200-012-0224-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, vanadium oxide thin film of TCR of -3.5%/K has been deposited by pulsed DC magnetron sputtering method. The property of this VOx has been investigated by X-ray diffractometer (XRD) and atomic force microscopy (AFM) in detail. XRD test indicates that this film is composed of V2O3, V3O5 and VO2. VOx microbolometer with infrared (IR) absorbing structure is fabricated based on porous silicon sacrificial layer technology. Optimized micro-bridge structure is designed and carried out to decrease thermal conductance and this structure shows good compatibility with micromachining technology. This kind of bolometer with 74% IR absorption of 8-14 ae m, has maximum detectivity of 1.09 x 109 cm$ Hz(1/2)/W at 24 Hz frequency and 9.8 mu A bias current.
引用
收藏
页码：292 / 297
页数：6
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