DOUBLE-QUANTUM-WELL CHARGE-TRANSPORT IN PSEUDOMORPHIC AL0.3GA0.7AS/IN0.15GA0.85AS/GAAS MODULATION-DOPED HETEROSTRUCTURES

被引：1

作者：

YOUNG, AP ^{[1
]}

FERNANDEZ, JM ^{[1
]}

CHEN, JH ^{[1
]}

WIEDER, HH ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of the spacer thickness upon the apparent mobility and the efficiency of electron transfer between two closely spaced quantum wells has been measured. By decreasing the distance of the delta-doped layer from the InGaAs channel below 100 angstrom, the efficiency of charge transfer into the InGaAs channel is increased. A dramatic drop is observed in the apparent mobility of the structure with the GaAs embedment when that distance is 50 angstrom. This indicates that the experimentally measured electron transport properties must be considered in terms of the parameters of two interacting channels, and are dominated by the properties of the embedded GaAs.

引用

页码：1309 / 1311

页数：3

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