GAAS HETEROEPITAXIAL GROWTH ON SI FOR SOLAR-CELLS

被引：56
|
作者：
ITOH, Y
NISHIOKA, T
YAMAMOTO, A
YAMAGUCHI, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 19期
关键词：
D O I：
10.1063/1.99058
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1617 / 1618
页数：2
相关论文
共 50 条
  • [41] PHOTON DEGRADATION OF ALGAAS/GAAS SOLAR-CELLS
    ANSPAUGH, B
    KACHARE, R
    ILES, P
    CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 985 - 989
  • [42] INVESTIGATION OF GAAS GROWTH FROM BI-BASED MELTS FOR SOLAR-CELLS
    BALDUS, A
    BETT, A
    SULIMA, OV
    WETTLING, W
    JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 305 - 309
  • [43] GROWTH OF GAL-XALXAS-GAAS SOLAR-CELLS FROM UNDERSATURATED MELTS
    WOODALL, JM
    HOVEL, HJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C317 - C317
  • [44] STACKING-FAULT STABILITY IN GAAS/SI HETEROEPITAXIAL GROWTH
    KIM, SD
    HARRIS, JS
    JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) : 439 - 444
  • [45] STRUCTURE OF HETEROEPITAXIAL GAAS ON SI
    ZABEL, H
    LUCAS, N
    FEIDENHANSL, R
    ALSNIELSEN, J
    MORKOC, H
    SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (05) : 515 - 517
  • [46] DEPOSITION AND PROPERTIES OF POLYCRYSTALLINE SI FOR SOLAR-CELLS
    MITANI, K
    NISHINO, S
    MATSUNAMI, H
    TANAKA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 1 - 5
  • [47] INDUSTRIALIZATION OF ALPHA-SI SOLAR-CELLS
    KUWANO, Y
    OHNISHI, M
    JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 1155 - 1164
  • [48] EVALUATION OF SI RIBBON CRYSTALS FOR SOLAR-CELLS
    HOJO, A
    IKAWA, Y
    MATSUI, T
    NAKAGAWA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 407 - 412
  • [49] HETEROJUNCTION SOLAR-CELLS OF SNO 2/SI
    FRANZ, S
    KENT, G
    ANDERSON, RL
    JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 107 - 123
  • [50] BANDGAP NARROWING EFFECTS ON THE OPEN-CIRCUIT VOLTAGE IN SI, GAAS AND INP SOLAR-CELLS
    NUBILE, P
    SOLID-STATE ELECTRONICS, 1995, 38 (01) : 139 - 142
12345