OXYGEN EFFECT ON SPECTRUM OF EXCITATION OF ALN LUMINESCENCE IN REGION OF INTERBAND-TRANSITIONS

被引：0
|
作者：
ORANOVSKII, VE [1 ]
PASTRNYAK, I [1 ]
PACHESOVA, S [1 ]
FOK, MV [1 ]
机构：
[1] PN LEBEDEV PHYS INST,MOSCOW,USSR
来源：
FIZIKA TVERDOGO TELA | 1976年 / 18卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：772 / 775
页数：4
相关论文
共 48 条
  • [1] THE EFFECT OF INTERBAND-TRANSITIONS ON THE ACOUSTIC SPECTRUM OF SEMIMETALS
    DUBOVIK, VM
    KHMELININ, AB
    FIZIKA TVERDOGO TELA, 1986, 28 (04): : 1272 - 1274
  • [2] THE CATHODOLUMINESCENCE SPECTRUM OF INTERBAND-TRANSITIONS IN MONOCRYSTALLINE GERMANIUM
    XU, XL
    HAO, LY
    XU, KZ
    YANG, BX
    LIU, CR
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (45) : L587 - L590
  • [3] HIGHER INTERBAND-TRANSITIONS IN THE UV REGION OF GASE
    PETALAS, J
    KALOMIROS, JA
    PHYSICAL REVIEW B, 1991, 44 (16): : 8694 - 8701
  • [4] DRAG EFFECT ON INTERBAND-TRANSITIONS IN GAAS
    ALPEROVICH, VL
    BELINICHER, VI
    NOVIKOV, VN
    TEREKHOV, AS
    FIZIKA TVERDOGO TELA, 1982, 24 (03): : 866 - 874
  • [5] ELECTRON-HOLE INTERACTION EFFECT ON THE SPECTRUM OF DIRECT INTERBAND-TRANSITIONS IN SILICON
    TOLPYGO, KB
    SHATALOV, VM
    FIZIKA TVERDOGO TELA, 1980, 22 (08): : 2463 - 2467
  • [6] BALLISTIC PHOTOGALVANIC EFFECT IN INTERBAND-TRANSITIONS IN GAAS
    ALPEROVICH, VL
    BELINICHER, VI
    MINAEV, AO
    MOSHCHENKO, SP
    TEREKHOV, AS
    FIZIKA TVERDOGO TELA, 1988, 30 (10): : 3111 - 3117
  • [7] REFLECTANCE SPECTRA AND DIELECTRIC FUNCTIONS FOR AG IN THE REGION OF INTERBAND-TRANSITIONS
    LEVEQUE, G
    OLSON, CG
    LYNCH, DW
    PHYSICAL REVIEW B, 1983, 27 (08): : 4654 - 4660
  • [8] SATURATION OF INTERBAND-TRANSITIONS IN SEMICONDUCTORS AND THE EFFECT OF OPTICAL BISTABILITY
    GOLL, J
    HAKEN, H
    PHYSICAL REVIEW A, 1983, 28 (02): : 910 - 928
  • [9] COLLECTIVE EXCITATION-SPECTRA IN METALS, SEMICONDUCTORS AND SEMIMETALS AND INTERBAND-TRANSITIONS
    DUBOVIK, VM
    FETISOV, EP
    FIZIKA TVERDOGO TELA, 1986, 28 (02): : 369 - 375
  • [10] EFFECT OF DISORDER ON STRUCTURES DUE TO INTERBAND-TRANSITIONS IN SILICON
    GEDDO, M
    MAGHINI, D
    STELLA, A
    SOLID STATE COMMUNICATIONS, 1986, 58 (07) : 483 - 484
12345