DEPTH DISTRIBUTIONS AND RANGE PARAMETERS FOR HE IMPLANTED IN SI AND GAAS

被引：29

作者：

WILSON, RG ^{[1
]}

DELINE, VR ^{[1
]}

HOPKINS, CG ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 10期

关键词：

D O I：

10.1063/1.93339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：929 / 931

页数：3

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